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The broadband metamaterial termination for use in planar superconducting transmission lines has been successfully demonstrated in CLASS circuit structures as an effective termination. This metamaterial implementation is fully compatible with microfabrication techniques commonly used for microwave circuitry, and its response is insensitive to geometric tolerances, material properties, and interface details of conductive elements in device fabrication. In the context of far-infrared imaging, polarimetric, and superconducting integral field unit (IFU) spectrometer arrays for astrophysics, this strategy leads to higher performance, increased device yield, and greater overall circuit density. The metamaterial termination achieves a broadband absorption response with lower reflectance in a smaller physical footprint compared to existing adiabatic structures. This absorption response demonstrates significantly lower sensitivity to fabrication tolerances, material properties, and modeling assumptions than previous designs. These characteristics are critical for cryogenic applications, but the termination can also enhance the performance of room-temperature planar transmission line structures used in microwave engineering. The termination is realized as a lossy stepped impedance transition between Nb and PdAu, which reduces the total meander length, device footprint, and sensitivity to detailed implementation. This broadband metamaterial termination is applicable in superconducting technologies, including quantum communications, computing, and sensors. It has reached Technology Readiness Level (TRL) 7 (technology demonstrated in an operational environment) and is now available for patent licensing.

Fabrication of NASA's pupil mask begins with the preparation of a silicon wafer, which serves as the foundation for the black silicon structure. The wafer undergoes ion beam figuring (IBF), a non-contact technique that precisely removes surface irregularities at the nanometer scale. This process ensures that the silicon surface is diffraction-limited, eliminating errors that could degrade optical performance. Once the wafer is polished to the required precision, it is then processed lithographically to define the mask pattern, creating reflective and absorptive regions essential for controlling light propagation. To achieve the desired high absorption characteristics, the lithographically patterned wafer undergoes cryogenic etching, a sophisticated process that transforms the silicon surface into a highly textured, black silicon structure. This method utilizes a controlled plasma environment with sulfur hexafluoride (SF6) and oxygen to etch the surface at cryogenic temperatures. The process is carefully optimized by adjusting parameters such as gas flow rates, chamber pressure, ion density, and etch duration, leading to the formation of high-aspect-ratio nanostructures on the silicon substrate. These structures, resembling a dense “forest” of silicon nanospikes, trap and diffuse incoming light, drastically reducing specular reflection. The resulting surface exhibits an ultra-low reflectivity that is orders of magnitude lower than conventional polished silicon. By leveraging NASA’s cutting-edge fabrication technique, the newly developed black silicon pupil mask offers a powerful solution for high-contrast astronomical imaging. Its ability to minimize scattered light and enhance optical contrast makes it an ideal component for space telescopes tasked with directly imaging exoplanets as well as other applications requiring ultra low reflectivity systems.