Simplified Complimentary Metal-oxide-semiconductor Manufacturing Technique

This invention provides a method and system for fabricating a biomarker sensor array by dispensing one or more entities using a precisely positioned, electrically biased nanoprobe immersed in a buffered fluid over a transparent substrate. Fine patterning of the substrate can be achieved by positioning and selectively biasing the probe in a particular region, changing the pH in a sharp, localized volume of fluid less than 100 nm in diameter, resulting in a selective processing of that region. One example of the implementation of this technique is related to Dip-Pen Nanolithography (DPN), where an Atomic Force Microscope probe can be used as a pen to write protein and DNA Aptamer inks on a transparent substrate functionalized with silane-based self-assembled monolayers. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to formation of patterns using biological materials, chemical materials, metals, polymers, semiconductors, small molecules, organic and inorganic thins films, or any combination of these.

The Ultra-Thin Large Area Polymer Film Fabrication Process incorporates a class of polymer materials called cyclic olefin copolymers (COC). COC films have high transparency, minimal absorption bands in far-infrared, exceptional mechanical strength, low moisture absorption and compatibility with standard fabrication process chemicals. The process creates ultra-thin sheets of COC film over large areas that can be used for optical windows, filters and optical components from the X-ray to the far-infrared. Additionally, the process allows for highly uniform thin films with topography. The fabrication process starts begins with a silicon wafer that is patterned with photolithography and etched using deep reactive ion etching. A cryogenic etching process may be used to reduce sidewall roughening. After the photoresist is removed, the silicon is cleaned and rendered hydrophobic through standard microfabrication processes. The COC film is spun on the etched silicon wafer, where the etched silicon wafer acts as a mold for the COC film. The COC film is baked on a hotplate. Since the COC film is a thermoplastic it will reflow during the curing process and fill the areas etched in the silicon wafer and planarize it's thickness. The COC film is able to be removed from the silicon wafer using a polymer tape frame and water submersion process. This fabrication process ultimately results in thin film that can have bumps or steps in areas where the silicon wafer has been etched for topography purposes.

This technology consists of a photoelectrochemical cell composed of thin metal oxide films. It uses sunlight (primarily the ultraviolet (UV), visible and Infrared (IR) portions)) and inexpensive titanium dioxide composites to perform the reaction. The device can be used to capture carbon dioxide produced in industrial processes before it is emitted to the atmosphere and convert it to a useful fuel such as methane. These devices can be deployed to the commercial market with low manufacturing and materials costs. They can be made extremely compact and efficient and used in sensor and detector applications.

The technology uses additive print manufacturing to produce hierarchical and integrated structural and functional elements into large-area thin-film structures. Adding these structural and functional elements has the potential to enable very lightweight, large-scale thin-films with improved damage tolerance, self-deployment capability, flexibility, and multifunctional (optical, thermal, electrical) connectivity and interrogation capabilities. Based on simple and proven additive manufacturing concepts, advanced geometrical, biomimetic (insect wing), and hierarchical structures could be applied to, or eventually with further development integrated within the bulk of large-area thin films using roll-to-roll processing techniques for a potentially low-cost manufacturing approach. The subject technology potentially addresses many of the disadvantages of current large-scale membrane material systems, which are prone to damage or require extensive deployment and support structures.

Several of the patented methods included in this suite of technologies enable super-hetero-epitaxy of rhombohedral/cubic compound semiconductors on specially oriented trigonal (e.g. sapphire) or hexagonal (e.g. quartz) crystal wafer substrates. This includes alignment of the growth crystal lattice with the underlying substrate lattice to minimize misfit strain-induced dislocation defects in the growing crystal. Thus thicker, defect-free crystal layers can be made. Rhombohedral/Cubic crystal twin defects which is 60 degree rotated on [111] orientation in a rhombohedral/cubic SiGe layer structure can be reduced to well less than 1% by volume, essentially providing a defect-free semiconductor material. Alternately, engineered lattice structures with a high degree of twinning can provide SiGe with improved thermoelectric properties due to the phonon scattering that inhibits thermal conduction without compromising electrical conductivity. Additional patented technologies in this suite provide for physical vapor deposition (PVD) growth methods utilizing molten sputtering targets and thermal control of heated substrates, including electron beam heating, in order to give the atoms in the sputtered vapor or on the substrate surface the energy needed for the desired crystal growth. The remaining patented technologies enable x-ray diffraction methods for detecting and mapping crystal twin defects across the entire as-grown semiconductor layer. These defects are critical to the performance of any semiconductor device manufactured from such compound semiconductor materials.