Advanced Efficiency Flexible Solar Film

This technology consists of a photoelectrochemical cell composed of thin metal oxide films. It uses sunlight (primarily the ultraviolet (UV), visible and Infrared (IR) portions)) and inexpensive titanium dioxide composites to perform the reaction. The device can be used to capture carbon dioxide produced in industrial processes before it is emitted to the atmosphere and convert it to a useful fuel such as methane. These devices can be deployed to the commercial market with low manufacturing and materials costs. They can be made extremely compact and efficient and used in sensor and detector applications.

This NASA Glenn innovation is a novel multi-junction photovoltaic cell constructed using selenium as a bonding material sandwiched between a thin film multi-junction wafer and a silicon substrate wafer, enabling higher efficiencies. A multi-junction photovoltaic cell differs from a single junction cell in that it has multiple sub-cells (p-n junctions) and can convert more of the sun's energy into electricity as the light passes through each layer. To further improve the efficiencies, this cell has three junctions, where the top wafer is made from high solar energy absorbing materials that form a two-junction cell made from the III-V semiconductor family, and the bottom substrate remains as a simple silicon wafer. The selenium interlayer is applied between the top and bottom wafers, then pressure annealed at 221°C (the melting temperature of selenium), then cooled. The selenium interlayer acts as a connective layer between the top cell that absorbs the short-wavelength light and the bottom silicon-based cell that absorbs the longer wavelengths. The three-junction solar cell manufactured using selenium as the transparent interlayer has a higher efficiency, converting more than twice the energy into electricity than traditional cells. To obtain even higher efficiencies of over 40%, both the top and bottom layers can be multi-junction solar cells with the selenium layer sandwiched in between. The resultant high performance multi-junction photovoltaic cell with the selenium interlayer provides more power per unit area while utilizing a low-cost silicon-based substrate. This unprecedented combination of increased efficiency and cost savings has considerable commercial potential. This is an early-stage technology requiring additional development. Glenn welcomes co-development opportunities.

A solar cell manufactured from this new optical fiber has photovoltaic (PV) material integrated into the fiber to enable electricity generation from unused light, including non-visible portions of the spectrum and visible light not transmitted to a lighting application. These new solar cells are based around cylindrical optical fibers, providing two distinct advantages over the flat panels that lead to increased efficiency. The core fiber, used to transmit light, can be adjusted to increase or decrease the amount of available light that is transmitted to the lighting application at any point in real time. This invention can be applied wherever optical concentrators are used to collect and redirect incident light. Wavelengths as large as 780 nanometers (nm) can be used to drive the conversion process. This technology has very low operating costs and environmental impacts (in particular, no greenhouse gas emissions). The fiber uses low-cost polymer materials. It is lightweight and flexible, and can be manufactured using low-cost solution processing techniques. Such multifunctional materials have great potential for the future of solar and photovoltaic devices. They will enable new devices that are small and lightweight that can be used without connection to existing electrical grids.

NASA researchers have developed the PAPA technology to increase the efficiency of the thin-film solar array assembly process, significantly decreasing assembly time and labor costs associated with manufacturing large scale solar arrays. Traditional solar cell assembly is a labor intensive, multi-step, time-consuming process. This manual assembly will not be possible in a space environment. To enable solar array assembly in space, PAPA leverages robotic automation to distill the traditional assembly method into four fully automated steps: applying adhesive to block substrate, placing the solar cells using a vacuum tool attached to a universal robotic arm, printing the interconnects and buses to connect the cells, and applying a protective cover. The PAPA technology is compatible with a variety of thin-film solar cells, including 3D printed cells (essential for future in-space manufacturing of arrays) and terrestrial manufacturing methods. As solar cell technologies mature, PAPA will be able to incorporate advancements into the paneling process. NASA researchers have begun to employ PAPA solar array fabrication and estimate savings of $300-$400/watt. For extraterrestrial assembly of solar panels the size of a football field or larger, PAPA could result in savings of approximately $500 million; a substantial cost savings driven by standardization and efficiency in the solar array assembly process. By demonstrating increases in assembly efficiency, time and cost savings, and passing multiple environmental exposure tests, the PAPA lab protype has completed the final phases of technology development and is ready for scale-up and commercialization.

Performance of solar cells and other electronic devices such as transistors can be improved greatly if carrier mobility is increased. Si and Ge have Type-II bandgap alignment in cubically strained and relaxed layers. Quantum well and super lattice with Si, Ge, and SiGe have been good noble structures to build high electron mobility layer and high hole mobility layers. However, the atomic lattice constant of Ge is bigger than that of Si and direct epitaxial growth generates large density of misfit dislocations which decrease carrier mobility and shorten device life time. So it required special buffer layers such as super lattice or gradient indexed layers to grow Ge on Si wafers or Si on Ge wafers. The growth of these buffer layers takes extra effort and time such as post-annealing process to remove dislocations by dislocation gliding inside buffer layer. This invention is a fabrication method for high mobility layer structures of rhombohedrally aligned SiGe on a trigonal substrate. The invention utilizes C-plane (0001) Sapphire which has a triangle plane, and a Si (Ge) (C) (111) crystal or an alloy of group TV semiconductor (111) crystal grown on the Sapphire.