Robust High Temperature SiC Op Amps Practical Fabrication

Prior approaches to bonding a SiC sensor and a SiC cover member relied on either electrostatic bonding or direct bonding using glass frits. The problem with the former is that its relatively weak bond strength may lead to debonding during thermal cycling, while the latter requires the creation of apertures that can allow sealant to leak. Glenn's innovation uses NASA's microelectromechanical system direct chip attach (MEMS-DCA) technology that can be bulk-manufactured to reduce sensor costs. The MEMS-DCA process allows a direct connection to be made between chip and pins, thereby eliminating wire bonding. Sensors and electronics are attached in a single-stage process to a multifunctional package, which, unlike previous systems, can be directly inserted into the housing. Additional thick pins within the electrical outlet allow the package to be connected to external circuitry. Furthermore, because the top and bottom substrates' thermomechanical properties are similar to that of the sensors, the problem of mismatch in the coefficient of thermal expansion is significantly reduced, minimizing thermal cycling and component fatigue. By protecting sensors and electronics in temperatures up to 600°C, approximately twice what has previously been achievable, Glenn's innovation enables SiC components to realize one of their most exciting possibilities - direct placement within high-temperature environments.

Conventional ambient-temperature oxygen sensors are limited in various ways: optically based sensors can be expensive and challenging to manufacture; electrochemical cells with liquid electrolytes can have limited lifetimes and become leak sources; and both types of sensors are difficult to miniaturize. These problems are addressed with Glenn's novel ambient temperature oxygen microsensor, which is based on a Nafiontm polymer electrolyte, microfabricated using thin-film technologies. In the past, one drawback of Nafiontm film has been that it can lose conductivity when the moisture content in the film is too low, potentially affecting sensor operation. Glenn researchers devised a method to use certain salts to hold water molecules in the Nafiontm film structure at room temperature. The presence of these salts provides extra sites in the film to promote proton (H+) mobility, thus improving film conductivity and overall sensor performance, particularly in arid and high-temperature environments. The innovative use of metal/metal oxide as the reference electrode enables miniaturization by eliminating the reference gas and sealing the reference electrode. The combination of interdigitized electrodes with the unique metal/metal oxide reference electrode permits sensor operation in either potentiometric or amperometric mode, as appropriate. In potentiometric mode, which measures voltage differences between working and reference electrodes in different gases, the voltage differences can be monitored with a voltmeter; however, the sensor itself does not need a power source. In room-temperature testing, the sensor achieved repeatable responses to 21 percent oxygen in nitrogen (using nitrogen as a baseline gas), and also detected oxygen from 7 to 21 percent, making Glenn's breakthrough technology usable for personal health monitoring as well as fire detection, fuel-leak detection, and environmental monitoring.

In conjunction with academia and industry, NASA's Glenn Research Center has developed a range of microelectromechanical systems (MEMS)-based and Silicon Carbide (SiC)-based microsensor technologies that are well-suited for many applications. The suite of technologies includes hydrogen and hydrocarbon leak detection sensors; emissions sensor arrays; and high-temperature contact pads for wire bond connections. Currently used to protect astronauts on the International Space Station, the hydrogen and leak detection sensors have many Earth-based applications as well. They can function as a single-sensor unit or as part of a complete smart sensor system that includes multiple sensors, signal conditioning, power, and telemetry. The system can comprise sensors for hydrogen, hydrocarbons, oxygen, temperature, and pressure. The emissions sensor array features a gas-sensing structure that detects various combustion emission species (carbon monoxide, carbon dioxide, oxygen, hydrocarbons, and nitrogen oxides) over a wide range of concentrations. In addition, the emissions sensor array remains highly sensitive and stable while providing gas detection at temperatures ranging from 450 to 600°C. These new sensors provide a combination of responsiveness and durability that offers great value for a wide range of applications and industries.

NASA Glenn's durable, extreme-temperature, integrated circuit chips begin with the replacement of conventional silicon IC transistors with n-channel SiC junction field effect transistors (JFET) and resistors that can reliably function above 500°C. JFETs with the necessary high-temperature stability and electrical gain are fabricated from commercial 4H-SiC wafers with epilayers using dry etching and a self-aligned n-type ion implantation. An innovative circuit approach creates digital logic gates from these normally-on n-channel JFETs and resistors. Using two levels of 500°C durable metal to interconnect numerous SiC gates, complex circuits enabling a variety of control, operation and sensing functions for intelligent systems in harsh environments can be implemented in physically small chips. The challenge of getting electrical signals to and from the chip in a harsh environment is overcome by the use of the iridium interfacial stack (IrIS) that acts simultaneously as a bond metal and diffusion barrier, and can be used on an ohmic contact to the SiC. Combined with Glenn-developed high-temperature durable ceramic chip packaging and harsh environment sensor technology, this revolutionary durable integrated circuit technology is game changing for harsh-environment applications of all types.

To avoid catastrophic failure, traditional electrical ohmic contacts must be placed at some distance from the optimal position (especially for sensors) in high-temperature environments. In addition, conventional metallization techniques incur significant production costs because they require multiple process steps of successive depositions, photolithography, and etchings to deposit the desired ohmic contact material. Glenn's novel production method both produces ohmic contacts that can withstand higher temperatures than ever before (up to 600°C), and permits universal and simultaneous ohmic contacts on n- and p-type surfaces. This makes fabrication much less time-consuming and expensive while also increasing yield. This innovative approach uses a single alloy conductor to form simultaneous ohmic contacts to n- and p-type 4H-SiC semiconductor. The single alloy conductor also forms an effective diffusion barrier against gold and oxygen at temperatures as high as 800°C. Glenn's extraordinary method enables a faster and less costly means of producing SiC-based sensors and other devices that provide quicker response times and more accurate readings for numerous applications, from jet engines to down-hole drilling, and from automotive engines to space exploration.